Forward Voltage Drop Power Loss, High Efficiency, High Surge Current Capability. 正向电压降功率损耗,高效率,高浪涌电流能力。
Planar IGBT Fabrication and Forward Voltage Drop Calculated by PIN Model 平面工艺IGBT制作及导通压降的PIN模型计算
It also analyses emphatically the quantitative relation between the minority carrier lifetimes in the base region under the different conditions of injection and their affects on the forward voltage drop by the theoretical calculation; 通过理论计算,着重分析了大、小注入下基区少子寿命间的定量关系及其对正向压降的影响;
Unfortunately, though the lifetime control technology reduces the stored charge, it increases the forward voltage drop ( Vf) and the reverse leakage current ( Ir). 然而,少子寿命控制技术在减少存贮电荷(Qs)的同时,也增大了正向通态压降(Vf)和反向漏电流(Ir);
However, accompanying beneficial reduction in switching speed there is a deleterious increase in forward voltage drop. 采用高能质子辐照既能提高开关速度又能尽量降低正向导通压降。
The paper describes a method which improves the compatibility of forward voltage drop. 本文给出了一个改善2CK正向压降一致性的方法。
This paper analyses the blocking voltage, forward voltage drop, photoresist mask design and gate-triggering and dynamic characteristics of high-power thyristors. 本文对大功率可控硅的阻断电压问题、正向压降问题、光刻掩模板的设计问题、控制极特性问题以及动特性问题进行了分析。
The temperature characteristic of the polysilicon p+ p-n+ junction's foreword bias were analyzed in detail. The theoretic expression and experimental data of the temperature rate of change of forward voltage drop were presented. 本文详细分析了横向多晶硅p+p-n+结的温度特性,给出了正向压降温度变化率的理论表达式和实验测量值;
Based on the analysis of temperature behavior of forward conduction voltage drop for a thyristors, the current balance coefficient K imax ( CBC K imax) of a converters are calculated and tested. 在分析晶闸管正向导通压降的温度特性基础上,对不同温度下变流器均流系数Kimax做了分析、计算和试验。
The paper describes a method which improves the compatibility of forward voltage drop. The new auto-adjustable charge pump can keep the charge pump working in high efficient 1X mode as long as possible. 根据负载LED的正向压降和输入电压选择工作模式,可以让驱动器最大限度地工作在高效率的1X模式下,有效地提高了驱动器的LED效率。
The Study for forward Saturated Voltage-drop of ZQ ZQ正向饱和压降的研究
In this paper, the mechanism of harmonic increments caused by device characteristics are analyzed in detail, and the compensation algorithm of a forward voltage drop is proposed. 该文详细分析了由器件特性引起的谐波增大的机理,提出了管压降补偿的方法。
The proposed diodes give stable performance throughout its operating temperature range and maintain negligible forward voltage drop with respect to temperature. 被提及的二极管在整个工作温度范围内性能稳定,并且对于温度的变化正向电压降的变化可以忽略不计。
The switch speed of power devices t_ ( off) will be increased, during the forward voltage drop Vp decreasing, because of conductivity modulation effects. It causes the operating frequency of power devices limited and switch loss increased. 这类器件在正向导通电压VF降低的同时,其关断时间t(off)却明显增长,这使其工作频率受限、开关功耗增大。
It is indicated that excellent characteristics of off state leakage current at high temperatures and very high off state breakdown voltage and sufficiently large forward current and low forward voltage drop may be obtained by reasonable designs. 指出,通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流,很高的截止态击穿电压,足够大的正向导通电流和足够低的正向导通压降。
Measuring forward voltage drop characteristics of PN junction with temperature using computer 应用计算机测定PN结正向压降的温度特性
The simulation results indicate that the SiGe/ Si heterojunction switching power diodes have low forward voltage drop, low stored charge and the performance is much better than the similar structure of Si devices. 结果表明,该功率二极管具有低的正向压降,较少的存贮电荷,其性能远远超过Si的同类型结构。
The low forward voltage drop and fast switching speed make the Schottky diodes especially suitable for high speed switching circuit and high current output circuit. 肖特基二极管因具有正向导通压降低、开关速度快的优点,使其尤其适用于高速开关电路和电压大电流输出电路,因而具有很强的应用价值和研究价值。